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High-Temperature Recess For Normally-Off Gallium Nitride Transistors
2015-07-14 10:55:46| rfglobalnet Home Page
Researchers in China and Hong Kong have claimed the highest output power density and power-added efficiency reported to date for gallium nitride (GaN)-based enhancement-mode metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) at 4GHz and in pulsed-mode.
Tags: recess
transistors
nitride
gallium
Category:Telecommunications
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