Home › High-Temperature Recess For Normally-Off Gallium Nitride Transistors
 

Keywords :   


High-Temperature Recess For Normally-Off Gallium Nitride Transistors

2015-07-14 10:55:46| rfglobalnet Home Page

Researchers in China and Hong Kong have claimed the highest output power density and power-added efficiency reported to date for gallium nitride (GaN)-based enhancement-mode metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) at 4GHz and in pulsed-mode.

Tags: recess transistors nitride gallium

Category:Telecommunications

Latest from this category

All news
»
05.11NI rise hits workers harder than employers, says OBR
05.11Tropical Storm Rafael Graphics
05.11Tropical Storm Rafael Wind Speed Probabilities Number 8
05.11Tropical Storm Rafael Public Advisory Number 8
05.11Summary for Tropical Storm Rafael (AT3/AL182024)
05.11Tropical Storm Rafael Forecast Advisory Number 8
05.11Lenzing Expands Nonwovens Range
05.11Netflix Europe offices raided in tax fraud probe
More »