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Home › IDT And EPC Collaborate To Integrate Gallium Nitride And Silicon For Faster, Higher Efficiency Semiconductor Devices

 

IDT And EPC Collaborate To Integrate Gallium Nitride And Silicon For Faster, Higher Efficiency Semiconductor Devices

2015-05-26 05:42:11| rfglobalnet Home Page

Integrated Device Technology, Inc. (IDT) recently announced its collaboration with Efficient Power Conversion (EPC) to develop technology based on Gallium nitride (GaN), a semiconductor material widely recognized for its speed and efficiency.

Tags: higher devices faster efficiency

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