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IDT And EPC Collaborate To Integrate Gallium Nitride And Silicon For Faster, Higher Efficiency Semiconductor Devices

2015-05-26 05:42:11| rfglobalnet Home Page

Integrated Device Technology, Inc. (IDT) recently announced its collaboration with Efficient Power Conversion (EPC) to develop technology based on Gallium nitride (GaN), a semiconductor material widely recognized for its speed and efficiency.

Tags: higher devices faster efficiency

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