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IR Emitting Diodes feature ±9° angles of half intensity.

2013-11-12 14:30:51| Industrial Newsroom - All News for Today

Based on GaAIAs surface emitter chip technology, Model VSMY14940 offers radiant intensity to 82 mW/sr at 70 mA drive current, switching time of 10 ns, and forward voltage of 1.48 V. In applications where lower intensity is needed, Model VSMB14940 is built on GaAIAs multi-quantum well technology for radiant intensity of 35 mW/sr, switching time of 15 ns, and forward voltage of 1.33 V. Housed in 3.2 x 2.51 x 1.2 mm clear SMD side-view packages, 940 nm devices are RoHS-compliant and halogen-free. This story is related to the following:Vision SystemsSearch for suppliers of: Infrared Diodes

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