Designed for military and industrial markets, OD-850WHT gallium aluminum arsenide (GaAlAs) IR light emitting diode has peak emission of 850 nm, optical half intensity beam angle of 80°, and typical optical power output from 24–28 mW. Device can operate without heat sinking and without derating to 80°C without any internal coatings. Available in hermetically-sealed, standard 2-lead TO-46 package, device features gold plating on all surfaces for durability.