Aimed at high-density power converters, motor drives, and actuators based on SiC transistors, power MOSFETs, and IGBTs, HADES® v2 chipset uses 3 ICs: HADES2P on primary side, HADES2S on secondary, and quad-diode ELARA. Unit includes all functions to drive gates of power switches in isolated, high voltage half bridge. HADES® is available in hermetic packages for extreme temperature applications up to 225°C, as well as in plastic packages for systems where temperature does not exceed 175°C.