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Home › MACOM Announces High Efficiency 500 W GaN On SiC HEMT Pulsed Power Transistor For Avionics Applications

 

MACOM Announces High Efficiency 500 W GaN On SiC HEMT Pulsed Power Transistor For Avionics Applications

2014-02-07 05:25:25| rfglobalnet News Articles

M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, recently announced a new GaN on SiC HEMT Power Transistor for L-Band pulsed radar applications.

Tags: high power applications efficiency

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