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Home › MACOM Announces New 650 W GaN On SiC HEMT Pulsed Power Transistor

 

MACOM Announces New 650 W GaN On SiC HEMT Pulsed Power Transistor

2015-03-20 05:45:46| rfglobalnet Home Page

M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance analog RF, microwave and optical semiconductor products, recently announced the new MAGX-000912-650L00 and MAGX-000912-650L0S, a 650 W gallium nitride (GaN) on silicon carbide (SiC) HEMT pulsed power transistor for L-band pulsed avionics applications. This transistor is available in standard flange or earless flange packaging.

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