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Home › Microsemi 750 Watt GaN On SiC RF Power Transistor Delivers Unparalleled High-power Performance For Aviation Applications

 

Microsemi 750 Watt GaN On SiC RF Power Transistor Delivers Unparalleled High-power Performance For Aviation Applications

2013-09-20 06:39:56| rfglobalnet News Articles

Microsemi Corporation(Nasdaq: MSCC),a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today expanded its family of radio frequency (RF) power transistors based on gallium nitride (GaN) high electron mobility transistor (HEMT) on silicon carbide (SiC) technology with a new 750 watt (W) RF transistor.

Tags: power performance applications delivers

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