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N-Channel Power MOSFET (100 V) offer optimized on-resistance.

2013-01-08 14:30:25| Industrial Newsroom - All News for Today

Respectively, SiB456DK and SiA416DJ TrenchFET® power MOSFETs come in thermally enhanced PowerPAK® SC-75 1.6 x 1.6 mm and PowerPAK SC-70 2 x 2 mm packages and offer on-resistance of less than 200 and 100 mΩ. Respective on-resistance times gate charge values for SiA416DJ are 540 mΩ-nC at 10 V and 455 mΩ-nC at 4.5 V, while values for SiB456DK are 611 mΩ-nC at 10 V and 558 mΩ-nC at 4.5 V. MOSFETs are optimized for boost converters, low-power DC/AC inverters, and primary side switching. This story is related to the following:MOSFETs

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