Home › N-Channel Power MOSFETs achieve low resistance.
 

Keywords :   


N-Channel Power MOSFETs achieve low resistance.

2015-01-22 14:31:53| Industrial Newsroom - All News for Today

Part of NexFET™ product line, 25 V Model CSD16570Q5B supports max Rdson of 0.59 mΩ, while 30 V Model CSD17570Q5B achieves max Rdson of 0.60 mΩ. Both are housed in 5 x 6 mm QFN package and are suitable for hot swap and ORing applications. For low-voltage battery-powered applications, 12 V Model CSD13383F4 comes in 0.6 x 1.0 mm FemtoFET™ package with Rdson of 44 mΩ at 4.5 V.

Tags: power low achieve resistance

Category:Industrial Goods and Services

Latest from this category

All news
01.07Mentorship in Motion
18.06A Request From the A League of Their Own Womens Special Interest Group
18.06Next MANAchat Series is Scheduled for the Week of August 5
17.06New Federal Government Filing Requirement Regarding Ownership of LLCs and Corporations
17.06Manufacturers Reps That Sell to International Customers June 26 Networking Event
17.06Avoid $591 Daily Penalty From the U.S. Treasury Department
Industrial Goods and Services »
01.07BASFs TECH Academy Introduces Louisiana High School Students to Technical Careers
01.07Hurricane Beryl Graphics
01.07Hurricane Beryl Public Advisory Number 11A
01.07Summary for Hurricane Beryl (AT2/AL022024)
01.07Atlantic Tropical Weather Outlook
01.07Eastern North Pacific Tropical Weather Outlook
01.07Tropical Depression Chris Graphics
01.07Tropical Depression Chris Public Advisory Number 3A
More »