Part No. CI-1HN89, based on single-level cell NAND flash technology, offers 8 Gb of reliable data storage in space, military, medical, and other harsh environments subject to potential radiation exposure. Configured as asynchronous NAND flash, device's high-density memory capacity consists of one 8 Gb (1024Mx8) die in hermetically sealed, 48-lead ceramic package. CMOS floating gate technology enables 100K program/erase cycles and 10 year data retention.
This story is related to the following:Flash Memories