Home NXP GaN Transistors Bring Broad Bandwidths, High Power, And Ruggedness Suited For Electronic Warfare And Communication Systems
 

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NXP GaN Transistors Bring Broad Bandwidths, High Power, And Ruggedness Suited For Electronic Warfare And Communication Systems

2016-05-31 07:56:21| rfglobalnet Home Page

NXP Semiconductors N.V. (NASDAQ: NXPI), today expanded its portfolio of broadband gallium nitride (GaN) RF power transistors ideal for electronic warfare and battlefield radio applications. The expansion includes six new driver or final-stage amplifiers that have frequency coverage as broad as 1 to 3000 MHz.

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