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Home › NXP Introduces New High Performance GaN RF Power Transistors For Cellular Base Stations

 

NXP Introduces New High Performance GaN RF Power Transistors For Cellular Base Stations

2016-05-31 08:45:35| wirelessdesignonline News Articles

NXP Semiconductors N.V. (NASDAQ:NXPI), today announced an expansion to its portfolio of 48V Gallium Nitride (GaN) RF power transistors optimized for Doherty power amplifiers for use in current and next-generation cellular base stations

Tags: high power base performance

Category:Telecommunications

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