Respectively, normally off 100 V GaN transistors GS61002P, GS61004P, GS61006P, and GS61008P are 20 A/21 mΩ, 40 A/11 mΩ, 60 A/8 mΩ, and 80 A/5 mΩ parts. Half bridge device, GS71008P (80 A/5 mΩ), is also available. Enhancement mode parts feature reverse current capability, source-sense for optimal high speed design, and minimal Total Gate Charge and Reverse Recovery Charge. RoHS-compliant, near chipscale, embedded GaNPX package minimizes inductance and optimizes thermal performance.
This story is related to the following:Gallium Nitride (GaN) Transistors |