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P-Channel Gen III Power MOSFET measures 2.4 x 2.0 x 0.4 mm.

2013-12-05 14:30:05| Industrial Newsroom - All News for Today

Supplied in 30-pin CSP MICRO FOOT® package with 0.4 mm profile, Si8851EDB increases efficiency while conserving space in mobile computing devices. This -20 V TrenchFET® p-channel Gen III power MOSFET offers on-resistance of 8.0 and 11.0 mΩ at respective gate drive of -4.5 and -2.5 V. Optimized for load and battery switches in power management applications for tablets, smartphones, and notebooks, halogen-free and RoHS-compliant device also provides 6 kV typ ESD protection. This story is related to the following:MOSFETs

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Category:Industrial Goods and Services

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