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P-Channel Power MOSFET offers low RDS(ON) values.

2014-05-01 14:30:19| Industrial Newsroom - All News for Today

Supplied in 2 x 2 mm PowerPAK® SC-70 package, SiA453EDJ p-channel TrenchFET® power MOSFET conserves space and increases power efficiency in portable electronics. RoHS-compliant and halogen-free product, 100% Rg and UIS tested, offers on-resistance of 18.5 m&Omega; (-10 V), 23.5 m&Omega; (-4.5 V), 26.0 m&Omega; (-3.7 V), and 37.7 m&Omega; (-2.5 V) as well as 4,000 V built-in ESD protection. While -30 V VDS provides headroom needed for over-voltage spikes, 12 V VGS enables on-resistance ratings of -3.7 and -2.5 V.<br /> This story is related to the following:MOSFETs

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