To ensure system health, Model S530 includes GUI-driven tool that expands diagnostic coverage for all system instrumentation and matrix pathways. KTE v5.5 addresses all I-V and C-V measurements required in process control monitoring, process reliability monitoring, and device characterization. In addition to 200 V system configuration used for standard CMOS, bipolar, and MEMS processes, 1 kV version is available for difficult breakdown and leakage tests that GaN, SiC, and Si LDMOS devices demand.
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