Built on DualBeam™ Plasma FIB platform with integrated SEM and nanoprobing capabilities, Helios PFIB EFI delivers site-specific sample preparation with in-situ SEM end-pointing and low-beam energy SEM-based transistor characterization. It includes electron-beam absorbed current for interconnect-level electrical fault isolation and electron-beam induced current analysis for diffusion characterization. By using FEI’s Dx delayering solution, system boosts deprocessing yields for 10 nm devices.