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Plastic GaN HEMTs support LTE and radar applications.

2015-10-19 14:31:07| Industrial Newsroom - All News for Today

Supplied in 4.5 x 6.5 mm plastic SMT packages, Models CGHV27060MP and CGHV35060MP are 50 V/60 W broadband GaN HEMTs fabricated on SiC substrate with 0.4 µm process. Model CGHV27060MP, supporting frequencies from UHF through 2.7 GHz, provides 16.5 dB gain, 70% drain efficiency, and 80 W output power at pulsed PSAT with 100 µs pulse width and 10% duty cycle. Model CGHV35060MP operates from 2.7–3.5 GHz. Tested at 3.3 GHz, device exhibits 14.5 dB gain with 67% drain efficiency.

Tags: support applications plastic radar

Category:Industrial Goods and Services

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