Consisting of 0.2 mm GaN HEMT MMIC power amplifier chip in flange mount package, Model APN180FP operates from 27–31 GHz with drain voltage of +28 V. Unit provides 21 dB of linear gain, +37 dBm of output power at 1 dB gain compression, and +39 dBm in saturation with Power Added Efficiency of 26% at midband. For less demanding applications, device can be operated from drain voltage as low as +20 V while still producing +37 dBm of saturated output power.
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