Home Power Transistor leverages gallium nitride (GaN) technology.
 

Keywords :   


Power Transistor leverages gallium nitride (GaN) technology.

2013-06-06 14:29:25| Industrial Newsroom - All News for Today

Fully qualified NPT1015 is 28 V, DC–2.5 GHz, 50 W power transistor with 15 dB saturated gain, 65% peak drain efficiency at 2 GHz, and thermal resistance is 1.9°C/W. During VSWR testing, all devices operated in saturated average power condition driven by 4,000 carrier 200 MHz wideband signal with 19.5 dB peak-to-average ratio. The devices showed 100% survivability and ~0.2 dB average change in saturated output power. SIGANTIC® GaN-on-Si process uses 4 in. silicon substrate. This story is related to the following:Power Transistors

Tags: power technology gan transistor

Category:Industrial Goods and Services

Latest from this category

All news

31.10Consolidated Financial Statements for the six-month period ended September 30, 2024
31.10Notice regarding the revision of the business results forecasts
Industrial Goods and Services »
05.11Tropical Storm Rafael Graphics
05.11Tropical Storm Rafael Wind Speed Probabilities Number 7
05.11Tropical Storm Rafael Public Advisory Number 7
05.11Summary for Tropical Storm Rafael (AT3/AL182024)
05.11Tropical Storm Rafael Forecast Advisory Number 7
05.11Boeing strike ends as workers back 38% pay rise deal
05.11Tropical Storm Rafael Public Advisory Number 6A
05.11Summary for Tropical Storm Rafael (AT3/AL182024)
More »