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Power Transistor targets L-Band pulsed radar applications.

2013-05-14 14:31:02| Industrial Newsroom - All News for Today

Consisting of gold-metalized pre-matched GaN on Silicon Carbide transistor, MAGX-001214-500L00 provides 500 W of output power with 19 dB of gain, 55% efficiency, and 300 µs pulse. High breakdown voltages allow for operation at 50 V under extreme load mismatch conditions. Operating in frequency range of 1,200–1,400 MHz, HEMT transistor is available in both flanged and flangeless packages. This story is related to the following:Gallium Nitride (GaN) Transistors | Power Transistors

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