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Power Transistors scale to peak pulse power level of 100 W.
2013-05-24 14:36:19| Industrial Newsroom - All News for Today
Housed in 3 x 6 mm DFN or 2.5 x 4.5 mm SOT-89 package, GaN in Plastic Transistors operate at 50 V drain bias and leverage sophisticated thermal management techniques for reliability in surface mount applications. Units are available in 90, 50, and 15 W models that can be mounted on PCBs via ground/thermal arrays. Featuring internal stress buffers that allow operation up to 200°C channel temperature, transistors are suited for ultra compact military and civilian radar systems. This story is related to the following:Gallium Nitride (GaN) Transistors |
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Category:Industrial Goods and Services