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Pulsed Power Transistor targets avionics applications.

2013-09-25 14:30:44| Industrial Newsroom - All News for Today

Operating over 1030–1090 MHz bandwidth, MAGX-001090-600L00 Ceramic GaN on SiC HEMT Power Transistor provides 600 W of output power with typ 21.4 db of gain and 63% efficiency. Device has low thermal resistance of 0.05° C/W and load mismatch tolerance of 5:1. With MTTF of over 600 years and low pulse droop of 0.2 dB, RF transistor is suited for pulsed avionics applications, such as secondary surveillance radar in air traffic control systems. This story is related to the following:RF Transistors | Gallium Nitride (GaN) Transistors |

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