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RF Power Transistors suit radar pulsed applications.

2014-09-02 14:31:59| Industrial Newsroom - All News for Today

Consisting of gold-metalized unmatched GaN on Silicon Carbide, Models MAGX-000035-015000 and MAGX-000035-01500S deliver 17 W of peak output power with 15.5 dB of power gain and 63% drain efficiency. Devices provide 50 V operation over frequency range of DC–3.5 GHz. Offered in both enhanced flanged and flangeless ceramic package, transistors have MTTF of 600 years and are suitable for civilian and military radar pulsed applications. This story is related to the following:Silicon Transistors | RF Transistors |

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