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RFMD Introduces 500 Watt GaN L-Band Amplifier

2013-06-10 04:07:35| wirelessdesignonline News Articles

RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency solutions, today introduced the RFHA1027, a gallium nitride (GaN) matched power transistor (MPT) that will deliver industry-leading pulse power performance of 500W in a compact flanged package at L-Band.

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