Home › RFMD Introduces 500 Watt GaN L-Band Amplifier
 

Keywords :   


RFMD Introduces 500 Watt GaN L-Band Amplifier

2013-06-10 04:07:35| wirelessdesignonline News Articles

RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency solutions, today introduced the RFHA1027, a gallium nitride (GaN) matched power transistor (MPT) that will deliver industry-leading pulse power performance of 500W in a compact flanged package at L-Band.

Tags: watt introduces amplifier gan

Category:Telecommunications

Latest from this category

All news
»
05.11Registration Now Open for RadTech 2025
05.11Atlantic Tropical Weather Outlook
05.11Eastern North Pacific Tropical Weather Outlook
05.11Tropical Storm Rafael Graphics
05.11Tropical Storm Rafael Public Advisory Number 7A
05.11Summary for Tropical Storm Rafael (AT3/AL182024)
05.11Vodafone-Three merger could get green light, watchdog says
05.11Altice USA residential video RGUs down 77,000 in 3Q 2024
More »