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RFMD Introduces World's First 6-Inch GaN-On-SiC Wafers For RF Power Transistors

2013-09-20 06:26:37| rfglobalnet Home Page

RFMD (Nasdaq: RFMD), a global leader in the design and manufacture of high-performance radio frequency solutions, today introduced the world's first 6-inch GaN-on-Silicon Carbide (SiC) wafers for manufacturing RF power transistors for both military and commercial use.

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