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Home › RFMW Launches GaN Power Doubler MMIC from TriQuint Semiconductor

 

RFMW Launches GaN Power Doubler MMIC from TriQuint Semiconductor

2013-08-17 17:46:55| Semiconductors - Topix.net

This 24V power doubler features 24dB gain at 1GHz. P1dB is 31dBm. CATV OEM customers, subcontractors and ODMs will appreciate the benefits of GaN HEMT processes offering as much as 2dB higher gain coupled with lower power dissipation than pure GaAs devices.

Tags: power launches semiconductor gan

Category:Electronics and Electrical

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