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Raytheon Continues To Drive GaN Evolution Through Cutting Edge Innovation

2014-02-28 06:07:39| rfglobalnet News Articles

Raytheon Company (NYSE:RTN) announced today that under the DARPA Microsystems Technology Office (MTO) Wide Bandgap Semiconductor Program, the company has systematically matured Gallium Nitride (GaN) from basic material to transistors, Monolithic Microwave Integrated Circuits (MMICs), Transmit/Receive (T/R) Modules and finally Transmit/Receive Integrated Multichannel Modules (TRIMMs), enabling game changing system performance for the DoD.

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