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Home › Richardson RFPD Introduces New 50V GaN On SiC RF Power Transistor From Microsemi

 

Richardson RFPD Introduces New 50V GaN On SiC RF Power Transistor From Microsemi

2013-10-24 03:38:29| rfglobalnet News Articles

Richardson RFPD, Inc. recently introduces a new 50V gallium nitride on silicon carbide (GaN on SiC) RF power high-electron-mobility transistor (HEMT) from Microsemi Corporation (Microsemi).

Tags: power sic introduces richardson

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