Silicon carbide (SiC) Schottky diodes exhibit breakdown field strength and thermal conductivity that let designers create products with optimized performance characteristics: zero reverse recovery, temperature-independent behavior, high-voltage capability, and high-temperature operation. Diodes include APT10SCD65K (650V, 10A, TO-220 package), APT10SCD65KCT (650V, 10A, common cathode TO-220 package), APT20SCD65K (650V, 20A, TO-220 package), and APT30SCD65B (650V, 30A, TO-247 package).
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