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Home › Sumitomo To Expand GaN-on-SiC Device Production With AIXTRON System

 

Sumitomo To Expand GaN-on-SiC Device Production With AIXTRON System

2014-06-10 10:40:27| rfglobalnet Home Page

Sumitomo Electric Device Innovations, Inc. (SEDI), Japan, has ordered an AIXTRON CRIUS MOCVD system to be delivered with 4-inch wafer configuration in order to boost production of gallium nitride on silicon carbide devices for RF data transfer applications.

Tags: system production expand device

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