Supplied in TO-247 package, models TK31N60X, TK39N60X, and TK62N60X of DTMOS IV-H series use single epitaxial process and achieve high speed switching performance while maintaining low ON-resistance level (0.088, 0.065, and 0.040 max R<sub><font size="2">DS(ON)</font></sub>) – all without loss of power. This is accomplished via reduction of parasitic capacitance between Gate and Drain, which also promotes power efficiency. Max V<sub><font size="2">DSS</font></sub> value is 600 V for all models, and respective max I<sub><font size="2">D</font></sub> values are 30.8, 38.8, and 61.8 A.<br />
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