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The Expanding Role Of GaN HEMT Devices In Military Electronics Design
2013-07-03 03:25:33| rfglobalnet Downloads
In the early 2000s, military designers developing the next generation of high-frequency, high-power amplifiers for radar, communications and EW equipment had reached the performance limits of conventional technologies, namely Traveling Wave Tubes (TWTs), silicon Laterally Diffused Metal Oxide Semiconductor (Si LDMOS) transistors, and gallium arsenide (GaAs) MESFETs.By Tom Dekker, Cree
Tags: design
electronics
role
military
Category:Telecommunications
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