Leading GaN (Gallium Nitride) innovator continues to attract global customers across multiple applications<br />
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GOLETA, Calif. - Transphorm Inc. today announced that it has been invited to present at Delta Electronics' exclusive Power Design Engineering event in Shanghai, to be held Nov. 22nd, 2013. Transphorm will present its JEDEC-qualified GaN (Gallium Nitride) on Silicon HEMT (high electron mobility transistor) products and applications based on its proprietary EZ-GaN™ ...This story is related to the following:Gallium Nitride (GaN) Transistors |