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Home › Vishay Intertechnology's Si7655DN -20 V P-Channel MOSFET Wins EDN China 2013 Innovation Award

 

Vishay Intertechnology's Si7655DN -20 V P-Channel MOSFET Wins EDN China 2013 Innovation Award

2013-12-16 06:00:00| Industrial Newsroom - All News for Today

MALVERN, Pa. &mdash; Vishay Intertechnology, Inc. (NYSE: VSH) today announced that its Si7655DN -20 V p-channel Gen III power MOSFET has won an EDN China 2013 Innovation Award. Presented at an award ceremony on Nov. 12 in Shanghai, the Si7655DN received a Best Product Award in the Power Devices and Modules category.<br /> <br /> The EDN China Innovation Awards were introduced in 2005 to recognize achievements in the design of ICs and related products in the Chinese market. This year, 144 ...This story is related to the following:MOSFETs |

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