With automated front opening universal pod, Helios NanoLab™ 1200AT DualBeam™ System can be located inside semiconductor wafer lab, where SEM imaging and focused ion beam milling are used to extract ultrathin samples of targeted structures for examination in TEM. System can create site-specific TEM samples thin enough to capture single transistor at 10 nm node, from wafers up to 300 mm in diameter. By moving 1200AT close to wafer process line, process development and ramp are accelerated.
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