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20-500 MHz, 100 Watt Power Amplifier: ATL-25801 Datasheet
2015-08-07 13:11:42| rfglobalnet Downloads
The ATL-25801 is a 20-500 MHz high-power RF alto amplifier featuring 100 Watts saturated power, 55 dB gain, and 50 ohm SMA RF connectors. These RF power amplifiers are designed for applications including broadband jamming, electronic warfare, EMC testing, mobile and other fixed terminals, and terrestrial point to point and point to multipoint.
Tags: power
mhz
watt
amplifier
20-500 MHz, 100 Watt Power Amplifier: ATL-25801 Datasheet
2015-08-07 13:11:42| rfglobalnet Home Page
The ATL-25801 is a 20-500 MHz high-power RF alto amplifier featuring 100 Watts saturated power, 55 dB gain, and 50 ohm SMA RF connectors. These RF power amplifiers are designed for applications including broadband jamming, electronic warfare, EMC testing, mobile and other fixed terminals, and terrestrial point to point and point to multipoint.
Tags: power
mhz
watt
amplifier
10W, 32V, DC-6 GHz Power Transistor: T1G6001032-SM Datasheet
2015-07-29 15:51:36| rfglobalnet Downloads
The T1G6001032-SM is a 10W discrete GaN on SiC HEMT with an operating frequency in the DC – 6 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.
Tags: power
ghz
transistor
datasheet
100W, 32V, DC-3.5 GHz Power Transistor: TQP0102 Datasheet
2015-07-29 15:44:00| rfglobalnet Downloads
The TQP0102 is a 5W discrete GaN on SiC HEMT with an operating frequency in the DC – 4 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.
Tags: power
ghz
transistor
datasheet
100W, 32V, DC-3.5 GHz Power Transistor: TGF2819-FS Datasheet
2015-07-29 15:41:00| rfglobalnet Downloads
The TGF2819-FS is a 100W discrete GaN on SiC HEMT with an operating frequency in the DC – 3.5 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.
Tags: power
ghz
transistor
datasheet
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