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Low Noise Amplifier (LNA): SKY67111-396LF Datasheet
2013-06-13 17:29:33| wirelessdesignonline Downloads
This datasheet includes features, specifications, a block diagram, and a detailed description of Skyworks’ SKY67111-396LF low noise amplifier
Tags: low
noise
amplifier
datasheet
Huawei Selects ANADIGICS' Pentaband Power Amplifier for New CPE and Hotspot Devices
2013-06-13 06:00:00| Industrial Newsroom - All News for Today
ANADIGICS’ Compact Pentaband Solution Features High Performance Power Amplifier Chains that Enable Operation in 21 Different 3G and 4G Frequency Bands and Band Classes<br /> <br /> WARREN, N.J. – ANADIGICS, Inc. (Nasdaq: ANAD), a world leader in radio frequency (RF) solutions, today announced that the Company is shipping production volumes of its ALT6526 pentaband power amplifier to Huawei for the E5172 consumer premises equipment (CPE) and E5776 WiFi hotspot. Huawei’s E5172 ...This story is related to the following:Power Amplifiers | RF Amplifiers | Voltage Gain Control Amplifiers | Linear Amplifiers
Tags: power
devices
amplifier
selects
Flange Mount GaN Power Amplifier: APN180FP Datasheet
2013-06-11 17:51:13| rfglobalnet Home Page
This datasheet includes information on performance characteristics, absolute maximum ratings, flanged package dimensions/pin locations, and more for the APN180FP Flange Mount GaN Power Amplifier.
Tags: power
mount
amplifier
gan
Flange Mount GaN Power Amplifier
2013-06-11 17:49:30| rfglobalnet Home Page
This two-stage, 8 Watt GaN HEMT power amplifier covers the 27 to 31 GHz frequency range. It has a linear gain of 20 dB, 39 dBm (typ) power saturation, and 28 VDC DC power at 720 mA. It’s well suited for applications involving point-to-point/multipoint radios, and in SATCOM terminals.
Tags: power
mount
amplifier
gan
Power Amplifier supports military/commercial applications.
2013-06-11 14:30:16| Industrial Newsroom - All News for Today
Consisting of 0.2 mm GaN HEMT MMIC power amplifier chip in flange mount package, Model APN180FP operates from 27–31 GHz with drain voltage of +28 V. Unit provides 21 dB of linear gain, +37 dBm of output power at 1 dB gain compression, and +39 dBm in saturation with Power Added Efficiency of 26% at midband. For less demanding applications, device can be operated from drain voltage as low as +20 V while still producing +37 dBm of saturated output power. This story is related to the following:Electronic Components and DevicesSearch for suppliers of: Microwave Monolithic Integrated Circuit (MMIC) Amplifiers |
Tags: power
applications
supports
amplifier
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