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X-Band GaN Solid State Power Amplifier (SSPA): VSX3630

2016-02-05 11:04:59| rfglobalnet Home Page

CPI’s Beverly Microwave Division presents VSX3630 GaN solid state power amplifiers (SSPAs) operating in the X-band (7.8 – 9.8 GHz). These high efficiency, high power, compact amplifiers are rugged, reliable, easy to maintain, and are designed for use as TWTA replacements for military radars.

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S-Band GaN Solid State Power Amplifier (SSPA): VSS3617 Datasheet

2016-02-05 11:02:45| rfglobalnet Home Page

The VSS3617 GaN solid state power amplifiers (SSPAs) are designed for operation in the S-band (2.7 – 2.9 GHz), and for use as air traffic control radar transmitters. The utilized GaN transistors provide high gain, high efficiency, and excellent pulse fidelity resulting in exceptional AM/PM, phase-noise, and spectral regrowth performance.

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S-Band GaN Solid State Power Amplifier (SSPA): VSS3617

2016-02-05 10:54:43| rfglobalnet Home Page

CPI’s Beverly Microwave Division presents VSS3617 GaN solid state power amplifiers (SSPAs) operating in the S-band (2.7 – 2.9 GHz). These high efficiency, high power, compact amplifiers are easy to maintain, and are designed for use as air traffic control radar transmitters.

Tags: state power solid solid state

 

Fujitsu Develops GaN Power Amplifier With World's Highest Output Performance For W-Band Wireless Transmissions

2016-01-26 04:54:42| rfglobalnet News Articles

Fujitsu Limited and Fujitsu Laboratories Ltd. (collectively "Fujitsu") recently announced the development of a gallium-nitride (GaN) high-electron mobility transistor (HEMT) power amplifier for use in W-band (75-110 GHz) transmissions. This can be used in a high-capacity wireless network with coverage over a radius of several kilometers.

Tags: power performance highest wireless

 

Fujitsu Develops GaN Power Amplifier With World's Highest Output Performance For W-Band Wireless Transmissions

2016-01-26 04:54:42| wirelessdesignonline News Articles

Fujitsu Limited and Fujitsu Laboratories Ltd. (collectively "Fujitsu") recently announced the development of a gallium-nitride (GaN) high-electron mobility transistor (HEMT) power amplifier for use in W-band (75-110 GHz) transmissions. This can be used in a high-capacity wireless network with coverage over a radius of several kilometers.

Tags: power performance highest wireless

 

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