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RF SOI Switch operates up to 40 GHz.

2015-02-11 14:30:48| Industrial Newsroom - All News for Today

Offering alternative to GaAs-based solutions and available as flip-chip die with 500 microns bump pitch, UltraCMOS® PE42524 SPDT RF SOI (silicon on insulator) switch die supports 10–40 GHz operation and exhibits 47 dB isolation and 2.2 dB insertion loss at 30 GHz as well as 50 dBm IIP3 at 13.5 GHz. Respective switching and settling times are 225 and 840 nsec, and ESD rating is 2,000 V HBM on all pins. No blocking capacitors are required if DC voltage is not present on RF ports.

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Peregrine Semiconductor Unveils 40 GHz RF SOI Switch

2015-02-06 01:51:24| rfglobalnet Home Page

Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, introduces the UltraCMOS® PE42524, the industry's first RF SOI switch to operate up to 40 GHz.

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Peregrine Semiconductor Unveils 40 GHz RF SOI Switch

2015-02-06 01:51:24| wirelessdesignonline News Articles

Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, introduces the UltraCMOS® PE42524, the industry's first RF SOI switch to operate up to 40 GHz.

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Goodyear Tire & Rubber (GT) Stock Falls After Full-Year 2014 SOI Growth Update

2015-01-13 18:34:06| Industrial Machines - Topix.net

Goodyear changed its expectations primarily because of a more challenging industry environment in Europe in the fourth quarter and a stronger dollar globally. The company also said it anticipates flat global volume and expects fourth-quarter impact of the aforementioned developments to be 15 cents to 20 cents per share below expectations at the time of the third-quarter call.

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Front-End Modules utilize SOI RF CMOS technology. .

2014-12-09 14:30:52| Industrial Newsroom - All News for Today

Intended for RF Front-End Module foundry market, 0.18 µm Silicon on Insulator RF CMOS technology uses thin-film SOI on trap-rich, high resistivity substrates. Technology features 2.5 V switch FET, 2.5 V CMOS, native NMOS, 1.6 KΩ/square poly resistors, 2.2 fF/um2 MIM capacitors, 4LM and 4 micron thick top metal. SOI RF CMOS process technology is optimized for antenna switches and tuners, which are core components of wireless FEMs for cellular and Wi-Fi connectivity.

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