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Tag: applications
Variable Gain Amplifier targets multi-market applications.
2013-06-10 14:29:36| Industrial Newsroom - All News for Today
Housed in 1.5 x 1.2 TDFN plastic package, Model MAAM-011100 is fabricated using GaAs process, which features full passivation. Broadband amplifier boasts typical gain control range of 30 dB with +13 dB of P1dB performance. Input and output are fully matched to 50 Ω with return loss of -12 dB. Typically biased with single +5 V Vd for standard operation over 4–20 GHz frequency band, amplifier is suited for WiFi, WiMax, IMS, point to point, test and measurement, and electronic warfare applications. This story is related to the following:Variable Gain Amplifiers | Integrated Circuits (IC)
Tags: applications
gain
variable
targets
EMCORE Introduces New DFB Laser Modules For Wireless And Distributed Antenna System Applications
2013-06-10 09:12:36| wirelessdesignonline News Articles
EMCORE Corporation (Nasdaq:EMKR), a leading provider of compound semiconductor-based components and subsystems for the fiber optics and solar power markets, announced today that it has introduced two new Distributed Feedback (DFB) laser modules designed for analog wireless and Distributed Antenna System (DAS) applications.
Tags: system
applications
wireless
modules
Sumitomo Electric Expands S-Band Offering For Radar Applications
2013-06-07 10:32:36| rfglobalnet News Articles
Sumitomo Electric Device Innovations USA, Inc. (SEDU), a leading provider of advanced wireless and optical communications solutions, is introducing new 500W single-ended GaN power amplifiers (PAs) for S-band radar at IMS 2013 in Seattle.
Tags: applications
offering
electric
radar
Sumitomo Electric Expands S-Band Offering For Radar Applications
2013-06-07 10:32:36| wirelessdesignonline News Articles
Sumitomo Electric Device Innovations USA, Inc. (SEDU), a leading provider of advanced wireless and optical communications solutions, is introducing new 500W single-ended GaN power amplifiers (PAs) for S-band radar at IMS 2013 in Seattle.
Tags: applications
offering
electric
radar
Toshiba Adds High Gain 200W GaN HEMT Power Amplifier For C-Band Radar Applications
2013-06-07 10:20:04| rfglobalnet News Articles
Toshiba America Electronic Components, Inc. (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, and its parent company, Toshiba Corp., recently announced the addition of a 200W C-Band gallium nitride (GaN) semiconductor High Electron Mobility Transistor (HEMT) to its power amplifier product family.
Tags: high
power
applications
gain
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