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Tag: applications
Toshiba Adds High Gain 200W GaN HEMT Power Amplifier for C-Band RADAR Applications
2013-06-04 06:00:00| Industrial Newsroom - All News for Today
Offer High Power, Gain and Efficiency to Enhance Weather RADAR Performance<br /> <br /> SEATTLE - 2013 INTERNATIONAL MICROWAVE SYMPOSIUM, Booth #2027, -Toshiba America Electronic Components, Inc. (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, and its parent company, Toshiba Corp., today announced the addition of a 200W C-Band gallium nitride (GaN) semiconductor High Electron Mobility Transistor (HEMT) to its power amplifier product ...This story is related to the following:Power Transistors | Power Amplifiers
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gain
Kontron Drives Costs Down, Performance Densities up for Content Delivery Applications in the ...
2013-06-04 06:00:00| Industrial Newsroom - All News for Today
Next generation SYMKLOUD Media platform is more energy efficient and supplies more than double the performance for video transcoding in the cloud<br /> <br /> Montreal, Canada — Kontron, a global leader of telecom, network and cloud infrastructure platform solutions, announced today that the SYMKLOUD MS2900 Media platform now supports the newly released 4th generation Intel Core i7 quad-core processor. Expected graphics performance levels are more than double the previous generation with ...This story is related to the following:Communication Systems and EquipmentSearch for suppliers of: Video Encoders
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2013 RCO Award applications now open
2013-06-03 18:26:00| Solid Waste & Recycling magazine Headlines
The Ontario Waste Minimization Awards has been celebrating exceptional results in waste reduction and recycling since 1984, but now Recycling Council of Ontario (RCO) is giving the awards a new look and delivery for 2013.
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applications
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rco
Dual Diode serves high-temperature, medium-voltage applications.
2013-06-03 14:29:46| Industrial Newsroom - All News for Today
Supplied in hermetically sealed metal can TO-257 package, general-purpose CHT-AMALTHEA operates from -55 to +225°C, includes 2 diodes, and comes in 3 configurations: common anode, common cathode, and dual series. Each diode has reverse voltage of 80 V, max forward current of 3 A DC, and 4 A peak at 225°C. Diodes present junction capacitance of 36 and 56 pF at 20 and 80 V reverse voltages, respectively, and rectifier bridge can be implemented using 2 AMALTHEA. This story is related to the following:Semiconductor Diodes | Diodes | Diode Arrays |
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dual
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diode
Shunt PIN Diodes suit high-power switching applications.
2013-06-03 14:29:44| Industrial Newsroom - All News for Today
Housed in 1.5 x 1.2 mm plastic package, Shunt PIN Diodes are suitable high power switching through 6 GHz with incident power up to 100 W. Broadband devices have frequency range of 0.05–12 GHz with 0.24 or 0.31 pF capacitance at -50 V and series resistance of 1.9, 3.4, or 1.5 Ω. Featuring 3-terminal, low-pass filter structure, diodes are suited for land mobile radio, wireless infrastructure, and test instrument applications. This story is related to the following:Switching Diodes |
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