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Cree Introduces New Low Cost, High Power GaN RF Transistors To Enable Higher Data Rate Telecom Systems
2014-05-30 12:47:48| rfglobalnet Home Page
Cree, Inc. introduces a new family of high power GaN RF transistors based on an innovative plastic package design, which leverages the superior RF performance of GaN in a low-cost platform.
Cree Introduces New Low Cost, High Power GaN RF Transistors To Enable Higher Data Rate Telecom Systems
2014-05-30 12:47:48| electronicsweb Home Page
Cree, Inc. introduces a new family of high power GaN RF transistors based on an innovative plastic package design, which leverages the superior RF performance of GaN in a low-cost platform.
W-Band Low Noise Amplifiers
2014-05-29 16:27:38| rfglobalnet Home Page
Northrop Grumman Microelectronics Products & Services’ latest entry in their series of W-band products include two new InP HEMT low noise amplifiers covering the 71-96 and 80-100 GHz frequency ranges. Both amplifiers are ideal for applications involving W-band imaging, sensors, radar, and short haul/high capacity links.
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01/07/2014 - BIFM Joint East Region & Sustainability SIG event – Low energy buildings including Passivhaus
2014-05-29 15:42:54| BIFM Events
Operating a Passivhaus building at the University of East Anglia (UEA); visit to the next one being constructed; and a retrofitted energy reducing device.
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Applications for US jobless aid near 7-year low
2014-05-29 15:15:55| Railroads - Topix.net
In this Thursday, Aug. 8, 2013, file photo, Applicants listen to a speaker's bull horn instructions for attending a combined Metropolitan Transportation Authority and Harlem Week job and career fair at Columbia University in New York.
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