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Cree Introduces New Low Cost, High Power GaN RF Transistors To Enable Higher Data Rate Telecom Systems
2014-05-30 12:47:48| rfglobalnet Home Page
Cree, Inc. introduces a new family of high power GaN RF transistors based on an innovative plastic package design, which leverages the superior RF performance of GaN in a low-cost platform.
Cree Introduces New Low Cost, High Power GaN RF Transistors To Enable Higher Data Rate Telecom Systems
2014-05-30 12:47:48| electronicsweb Home Page
Cree, Inc. introduces a new family of high power GaN RF transistors based on an innovative plastic package design, which leverages the superior RF performance of GaN in a low-cost platform.
Low Power, Longer Distance, Tiny Package: New Laser Sensing Technology for Self-driving Cars, ...
2014-05-29 06:00:00| Industrial Newsroom - All News for Today
Able to remotely sense objects across distances as long as 30 ft, 3D imaging technology developed by researchers at University of California, Berkeley, could (with further development) be used to make smaller, inexpensive 3D imaging systems that offer maximized range for such potential uses as self-driving cars, smartphones, and interactive video games without requiring bulky boxes of electronics or optics. UC Berkeley's Behnam Behroozpour will present this work at CLEO: 2014 on June 11. This story is related to the following:Trade Associations
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Cree Introduces Highest Power And Frequency Plastic Packaged GaN Transistors For Low Cost Radar And Datalinks
2014-05-16 13:01:18| rfglobalnet Home Page
Cree, Inc. introduces the industry’s highest power continuous wave (CW) GaN HEMT RF transistors packaged in a dual-flat no-leads (DFN) format. Aimed at the cost-sensitive sub-100W commercial radar and data link amplifier market segments, the new 6- and 25-watt DFN transistors effectively obsolete the use of inefficient GaAs transistors in C- and X-Band frequencies and also enable the practical replacement of short life tube-based technology for commercial radar applications such as weather, marine and surveillance.
Cree Introduces Highest Power And Frequency Plastic Packaged GaN Transistors For Low Cost Radar And Datalinks
2014-05-16 13:01:18| electronicsweb Home Page
Cree, Inc. introduces the industry’s highest power continuous wave (CW) GaN HEMT RF transistors packaged in a dual-flat no-leads (DFN) format
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