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02.04.13 -- Compact Fiber Optic Identifier With A Detachable InGaAs Detector
2013-02-01 09:45:48| fiberopticsonline Home Page
02/04/13 Fiber Optics Online Newsletter
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Compact Fiber Optic Identifier With A Detachable InGaAs Detector
2013-01-30 07:27:59| fiberopticsonline News Articles
GAO Instruments recommends its compact fiber optic identifier which provides transmission direction, multiple signal frequency identification and a detachable InGaAs detector
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New Sensors Unlimited 2048-Pixel InGaAs Linescan Camera for 3-D Optical Coherence Tomography
2013-01-22 06:00:00| Industrial Newsroom - All News for Today
CHARLOTTE, N.C. - UTC Aerospace Systems, a unit of United Technologies Corp. (NYSE:UTX), announces the next generation Sensors Unlimited shortwave infrared (SWIR) digital Linescan camera for Spectral Domain Optical Coherence Tomography (SD-OCT). The new high-resolution, indium gallium arsenide (InGaAs) SWIR camera will be showcased during SPIE's BiOS and Photonics West Exhibitions, February 2-7, 2013, in UTC Aerospace Systems booths (# 8811 for BiOS and #811 for Photonics West) at The Moscone ...This story is related to the following:Computer Hardware and PeripheralsLine Scan Cameras | High Resolution Cameras |
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1.7 m InGaAs PD Arrays for 1D: 2D Sensors
2013-01-17 11:06:30| electronicsweb Products
To comply with increasing demands for higher transmission rates and longer wavelength components, Marktech is now producing high reliability wafers on 2", 3" and 4" substrates utilizing sophisticated manufacturing processes in Epitaxial InP thin film growth. GaAs and SiGe based components are known to have limitations in speed. InP platform based devices are capable of exceeding these transmission rate limitations, including the operating margin.
1.7 m InGaAs PD Arrays for 1D: 2D Sensors
2013-01-17 11:06:30| electronicsweb Products
To comply with increasing demands for higher transmission rates and longer wavelength components, Marktech is now producing high reliability wafers on 4" substrates utilizing sophisticated manufacturing processes in Epitaxial InP thin film growth. GaAs and SiGe based components are known to have limitations in speed. InP platform based devices are capable of exceeding these transmission rate limitations, including the operating margin.
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