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Intersil Corporation Expands Power MOSFET Expertise
2015-09-15 12:31:10| Industrial Newsroom - All News for Today
Company Acquires Great Wall Semiconductor, Targeting Cloud Computing, Space and Consumer Applications MILPITAS, Calif. - Intersil Corporation (NASDAQ:ISIL), a leading provider of innovative power management and precision analog solutions, today announced the acquisition of Great Wall Semiconductor (GWS), a private...
Tags: power
corporation
expertise
expands
Intersil Corporation Expands Power MOSFET Expertise
2015-09-09 08:44:50| Semiconductors - Topix.net
GWS's design team brings valuable experience leveraging advanced design and process technology to enable power efficiency gains and footprint reduction in complex power systems. GWS's existing and emerging FET products in combination with Intersil's power controller portfolio, are expected to expand Intersil's addressable market and provide compelling integration opportunities to accelerate innovation in the development of next generation power stages.
Tags: power
corporation
expertise
expands
N-Channel MOSFET saves space in mobile devices.
2015-06-22 14:31:06| Industrial Newsroom - All News for Today
Housed in chipscale MICRO FOOT® 0.8 x 0.8 mm package with 0.357 mm profile, TrenchFET® 20 V Model Si8824EDB extends battery usage and saves space in smartphones, tablets, wearable devices, solid-state drives, and portable medical devices. Unit features extremely low on-resistance of 75 mΩ at 4.5 V, 82 mΩ at 2.5 V, 90 mΩ at 1.8 V, 125 mΩ at 1.5 V, and 175 mΩ at 1.2 V. To prevent static damage from handling or human body contact, MOSFET has 2,000 V integrated ESD protection.
Tags: mobile
space
devices
saves
SiC MOSFET minimizes equipment size and power consumption.
2015-06-09 14:31:04| Industrial Newsroom - All News for Today
Adopting trench structure, SiC MOSFET (Metal Oxide Semiconductor Field Effect Transistor) offers ON resistance that decreases power loss in equipment ranging from industrial inverters and power supplies to power conditioners for solar power systems. Full SiC power module (1,200 V/180 A), incorporating trench-type SiC MOSFETs in a 2-in-1 circuit with integrated SiC SBDs, is also available.
Tags: size
power
equipment
consumption
SiC MOSFET targets high frequency power electronics.
2015-05-19 14:31:06| Industrial Newsroom - All News for Today
Built on SiC planar technology, Model C3M0065090J is suited for renewable energy inverters, electric vehicle charging systems, and 3-phase industrial power supplies. Device is rated at 900 V/32 A with low on-resistance of 65 mΩ at 25°C. At higher temperature operation (TJ = 150°C), RDS(ON) is just 90 mΩ. In addition to industry-standard TO247-3 and TO220-3 packages, MOSFET is available in low-impedance D2Pak-7L surface mount package with Kelvin connection to help minimize gate ringing.
Tags: high
power
electronics
frequency
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