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Tag: mosfet
Asymmetric Dual N-Channel MOSFET features low on-resistance.
2014-01-17 14:32:39| Industrial Newsroom - All News for Today
Housed in 3 x 3 mm PowerPAIR® package utilizing TrenchFET Gen IV technology, 30 V Siliconix SiZ340DT is optimized for synchronous buck designs in cloud computing infrastructures, servers, telecommunication equipment, and client-side electronic devices. Low-side Channel 2 MOSFET of SiZ340DT offers low on-resistance of 5.1 mΩ at 10 V gate drive and 7.0 mΩ at 4.5 V, while high-side Channel 1 MOSFET features on-resistance of 9.5 mΩ at 10 V and 13.7 mΩ at 4.5 V. This story is related to the following:MOSFET Transistors |
Tags: low
features
dual
asymmetric
IXYS Integrated Circuits Division Introduces The FDA217 Dual Photovoltaic MOSFET Driver
2014-01-17 01:24:03| electronicsweb News Articles
IXYS Integrated Circuits Division (ICD), Inc., a wholly owned subsidiary of IXYS Corporation, announced the availability of the FDA217, an optically isolated, dual photovoltaic MOSFET driver
Tags: division
integrated
driver
dual
Dual Photovoltaic MOSFET Driver replaces discrete solutions.
2014-01-14 14:30:45| Industrial Newsroom - All News for Today
Featuring optically coupled technology that provides 3,750 Vrms input to output isolation, FDA217 can achieve 27 µA short circuit current with input LED current of 30 mA. Each independent driver consists of LED optically coupled to photodiode array, and each array can generate open circuit voltage of 12.2 V and short circuit current of 9.1 µA with forward LED current of 10 mA. Driver output is controlled via GaAlAs IR LED at input, and photodiode array can generate floating power source. This story is related to the following:Electrical Equipment and Systems Sponsored by: Globtek Inc. - MOBILE BANNER ADSearch for suppliers of: MOSFET Drivers
Tags: solutions
driver
dual
discrete
P-Channel MOSFET increases efficiency in mobile computing devices.
2014-01-09 14:30:33| Industrial Newsroom - All News for Today
Supplied in 6.15 x 5.15 mm PowerPAK® SO-8 package, -20 V Si7157DP TrenchFET® p-channel Gen III power MOSFET offers respective on-resistance of 0.0016 and 0.0020 Ω at -10 and -4.5 V. On-resistance values enable designers to achieve lower voltage drops and conduction losses in circuits, promoting efficient use of power and consequently extending battery run times. RoHS-compliant product is optimized for load and battery switches in power management applications for notebook computers. This story is related to the following:MOSFETs
Tags: mobile
devices
increases
computing
Micrel Launches New 85V Half Bridge MOSFET Driver With Adaptive Dead Time and
2014-01-08 14:14:54| Semiconductors - Topix.net
The Adaptive-Dead-Time circuitry actively monitors the Half Bridge to minimize the time between high and low side MOSFET transitions, which maximizes power efficiency.
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