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Efficient Power Conversion (EPC) Blurs The Line Between Power And RF Transistors With Family Of Gallium Nitride Transistors Capable Of Amplification Into The Multiple GHz Range
2013-09-27 08:27:53| rfglobalnet News Articles
Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs extends its family of high-speed, high performance transistors with the EPC8000 family of products.
Efficient Power Conversion (EPC) Blurs The Line Between Power And RF Transistors With Family Of Gallium Nitride Transistors Capable Of Amplification Into The Multiple GHz Range
2013-09-27 08:27:53| wirelessdesignonline News Articles
Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs extends its family of high-speed, high performance transistors with the EPC8000 family of products.
Power Transistors scale to peak pulse power level of 100 W.
2013-05-24 14:36:19| Industrial Newsroom - All News for Today
Housed in 3 x 6 mm DFN or 2.5 x 4.5 mm SOT-89 package, GaN in Plastic Transistors operate at 50 V drain bias and leverage sophisticated thermal management techniques for reliability in surface mount applications. Units are available in 90, 50, and 15 W models that can be mounted on PCBs via ground/thermal arrays. Featuring internal stress buffers that allow operation up to 200°C channel temperature, transistors are suited for ultra compact military and civilian radar systems. This story is related to the following:Gallium Nitride (GaN) Transistors |