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RRAM Non-Volatile Memory offers 1 TB capacity.

2013-08-08 14:30:31| Industrial Newsroom - All News for Today

Featuring 3-layer structure consisting of non-metallic bottom electrode, amorphous silicon switching medium, and metallic top electrode, Resistive RAM can be stacked in 3D, delivering multiple terabytes of storage on single chip. Device enables massive amounts of information, such as 250 hours of HD movies, to be stored and played back. Typical applications include mobile phones and tablets; enterprise storage, SSDs, and cloud computing; wearable computing; and secure payments. This story is related to the following:Electronic Components and Devices Sponsored by: Globtek Inc. - Your Power Partner...For Over 20 Years!Search for suppliers of: Data Storage Products | Integrated Circuits (IC) |

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Skyera CEO Gives Keynote Address at Flash Memory Summit

2013-08-07 06:00:00| Industrial Newsroom - All News for Today

SAN JOSE, Calif. -- Dr. Radoslav Danilak, CEO and co-founder of Skyera Inc., founded by an executive and engineering team with unsurpassed backgrounds in the solid-state, storage and networking arenas, will give a keynote speech at the industry's most prestigious conference on flash memory technology, the Flash Memory Summit, August 13-15 at the Santa Clara Convention Center in California.<br /> <br /> Danilak's keynote, "How Next-Generation Flash Will Change Enterprise Storage," will discuss ...This story is related to the following:Flash Memories |

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Samsung's New 3D V-NAND Flash Memory in Production

2013-08-07 03:34:50| PC Magazine Storage Devices Product Guide

The new flash technology offers two to 10 times the reliability and double the write performance of the most advanced flash memory currently on the market, the company said.

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Testing DDR3 Memory with Boundary Scan / JTAG Explored in New eBook by ASSET InterTech

2013-08-06 06:00:00| Industrial Newsroom - All News for Today

Richardson, TX  &ndash; ASSET® InterTech (<a href="http://www.asset-intertech.com">www.asset-intertech.com</a>), the leading supplier of tools for embedded instrumentation, has issued a new eBook on how to test DDR memory with non-intrusive JTAG or boundary-scan (IEEE 1149.1) methods. A recent survey of engineers by the International Electronics Manufacturing Initiative (iNEMI) found that testing memory soldered to circuit boards is a major problem for system manufacturers.<br /> <br ...

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Startup's 'RRAM' Tech Promises 1TB Memory for Mobile Devices

2013-08-05 23:33:42| PC Magazine Storage Devices Product Guide

Emerging from stealth mode, Crossbar serves up a new memory tech which it says can outperform NAND Flash by orders of magnitude on "an IC smaller than a postage stamp."

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